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  ? semiconductor components industries, llc, 2012 july, 2012 ? rev. 12 1 publication order number: mmbta42lt1/d mmbta42l, SMMBTA42L, mmbta43l high voltage transistors npn silicon features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings characteristic symbol value unit collector ? emitter voltage mmbta42, smmbta42 mmbta43 v ceo 300 200 vdc collector ? base voltage mmbta42, smmbta42 mmbta43 v cbo 300 200 vdc emitter ? base voltage mmbta42, smmbta42 mmbta43 v ebo 6.0 6.0 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r  ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r  ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sot ? 23 (to ? 236) case 318 style 6 2 3 1 http://onsemi.com collector 3 1 base 2 emitter see detailed ordering and shipping information in the package dimensions sec tion on page 5 of this data sheet. ordering information *date code orientation and/or overbar may vary depending upon manufacturing location. 1 1d m   1d = mmbta42lt, SMMBTA42L m1e = mmbta43lt m = date code*  = pb ? free package (note: microdot may be in either location) marking diagrams 1 m1e m  
mmbta42l, SMMBTA42L, mmbta43l http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) mmbta42, smmbta42 mmbta43 v (br)ceo 300 200 ? ? vdc collector ? base breakdown voltage (i c = 100  adc, i e = 0) mmbta42, smmbta42 mmbta43 v (br)cbo 300 200 ? ? vdc emitter ? base breakdown voltage (i e = 100  adc, i c = 0) v (br)ebo 6.0 ? vdc collector cutoff current (v cb = 200 vdc, i e = 0) mmbta42, smmbta42 (v cb = 160 vdc, i e = 0) mmbta43 i cbo ? ? 0.1 0.1  adc emitter cutoff current (v eb = 6.0 vdc, i c = 0) mmbta42, smmbta42 (v eb = 4.0 vdc, i c = 0) mmbta43 i ebo ? ? 0.1 0.1  adc on characteristics (note 3) dc current gain (i c = 1.0 madc, v ce = 10 vdc) both types (i c = 10 madc, v ce = 10 vdc) both types (i c = 30 madc, v ce = 10 vdc) mmbta42, smmbta42 mmbta43 h fe 25 40 40 40 ? ? ? ? ? collector ? emitter saturation voltage (i c = 20 madc, i b = 2.0 madc) mmbta42, smmbta42 mmbta43 v ce(sat) ? ? 0.5 0.5 vdc base ? emitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v be(sat) ? 0.9 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 50 ? mhz collector ? base capacitance (v cb = 20 vdc, i e = 0, f = 1.0 mhz) mmbta42, smmbta42 mmbta43 c cb ? ? 3.0 4.0 pf 3. pulse test: pulse width  300  s, duty cycle  2.0%.
mmbta42l, SMMBTA42L, mmbta43l http://onsemi.com 3 typical characteristics figure 1. dc current gain i c , collector current (ma) 100 1 0.1 10 100 h fe , dc current gain 1000 10 figure 2. collector ? emitter saturation voltage vs. collector current i c , collector current (ma) 10 1 0.0 0.4 0.8 1.2 100 figure 3. base ? emitter saturation voltage vs. collector current i c , collector current (ma) 100 1 0.1 0 0.2 0.8 1.0 10 figure 4. base ? emitter on voltage vs. collector current i c , collector current (ma) figure 5. base ? emitter temperature coefficient i c , collector current (ma) figure 6. capacitance v r , reverse voltage (volts) 1000 10 0.1 0.1 1 10 c, capacitance (pf) 100 100 t j = 150 c v ce = 10 v 25 c ? 55 c v ce(sat) , collector ? emitter saturation voltage (v) i c /i b = 10 150 c 25 c ? 55 c 0.1 0.6 1.0 0.2 v be(sat) , base ? emitter saturation voltage (v) i c /i b = 10 150 c 25 c ? 55 c 0.6 0.4 0.1 0.7 0.9 0.5 0.3 v be(on) , base ? emitter voltage (v) 100 1 0.1 0 0.2 0.8 1.0 10 i c /i b = 10 150 c 25 c ? 55 c 0.6 0.4 0.1 0.7 0.9 0.5 0.3 100 1 0.1 ? 2.8 ? 2.0 10  vb , temperature coefficient (mv/ c) v ce = 10 v ? 55 c to 150 c ? 0.4 ? 1.2 ? 2.4 0 ? 0.8 ? 1.6  vb , for v be t j = 25 c f = 1 mhz c ibo c obo 1
mmbta42l, SMMBTA42L, mmbta43l http://onsemi.com 4 typical characteristics figure 7. current ? gain ? bandwidth product i c , collector current (ma) 10 1 10 f ta u , current ? gain bandwidth (mhz) 100 100 v ce = 20 v t j = 25 c figure 8. safe operating area v ce , collector emitter voltage (v) 10 1 0.001 i c , collector current (a) 1 1000 10 ms 100 0.1 0.01 1.0 s
mmbta42l, SMMBTA42L, mmbta43l http://onsemi.com 5 ordering information device order number package type shipping ? mmbta42lt1g sot ? 23 (pb ? free) 3,000 / tape & reel SMMBTA42Lt1g sot ? 23 (pb ? free) 3,000 / tape & reel mmbta42lt3g sot ? 23 (pb ? free) 10,000 / tape & reel SMMBTA42Lt3g sot ? 23 (pb ? free) 10,000 / tape & reel mmbta43lt1g sot ? 23 (pb ? free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mmbta42l, SMMBTA42L, mmbta43l http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap  mm inches  scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1  e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10  on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbta42lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative


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